FD500JV-90DA 查看數據表（PDF） - MITSUBISHI ELECTRIC

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FD500JV-90DA

MITSUBISHI SOFT RECOVERY DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE

MITSUBISHI ELECTRIC  

MITSUBISHI SOFT RECOVERY DIODES

FD500JV-90DA

HIGH POWER, HIGH FREQUENCY,

PRESS PACK TYPE

ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Test conditions

IRRM

VFM

QRR

Erec

tb/ta

VFP

Rth(j-f)

Repetitive peak reverse current

Forward voltage

Reverse recovery charge

Reverse recovery loss

Soft recovery rate

Forward recovery voltage

Thermal resistance

VRM = 4500V, Tj = 125°C

IFM = 1570A, Tj = 125°C

IFM = 500A, di/dt = 1000A/µs, VR = 2250V, Tj = 125°C

(Refer to Fig. 1 and Fig. 2)

di/dt = 1000A/µs, Tj = 25°C

Junction to fin

Limits

Unit

Min.

Typ.

Max.

—

—

80

mA

—

—

3.5

V

—

—

1500 µC

—

4.0

—

J/P

—

2

—

—

—

100

—

V

—

—

.027 °C/W

Fig. 1 (Definition of reverse recovery waveform)

QRR = (trr × IRM)/2

IFM

0

50%IFM

di/dt(0~50%IFM) (Note 1)

trr

ta

tb

IRM

50%IRM

90%IRM

Fig. 2 (Reverse recovery test circuit)

L(line)

VD = 2250V

L(load)

GCT

FD500JV

Rc

CDi

Cc : 6µF

Cc Rc = 2Ω

di/dt = VD/L(line) = 2250V/1.125µH = 2000A (Note 1)

Note 1

In case of 2000A/µs, definition of di/dt is by VD and inductance value of L (line) as follows.

di/dt = VD/L (line) = 2250V/1.125µH = 2000A/µs

Feb.1999

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