¡ Semiconductor
MSM54V32126/8
AC Characteristics (2/2)
(VCC = 3.3 V ±0.3 V, Ta = 0°C to 70°C) Note 1, 2, 3
Parameter
MSM54V32126/8 MSM54V32126/8
Symbol
-50
-60
Unit Note
Write Command Hold Time referenced to RAS
Write Command Pulse Width
Write Command to RAS Lead Time
Write Command to CAS Lead Time
Output Buffer Turn-off Delay Time from WE
Min. Max. Min. Max.
tWCR
35
—
40
— ns
tWP
9
—
10
— ns
tRWL
9
tCWL
9
—
10
— ns
—
10
— ns 14
tWEZ
3
20
3
20 ns 5
Data Set-up Time
tDS
0
—
0
— ns 7, 12
Data Hold Time
Data Hold Time referenced to RAS
OE to Data-in Delay Time
RAS to WE Delay Time
Column Address to WE Delay Time
CAS to WE Delay Time
Data to CAS Delay Time
Data to OE Delay Time
Access Time from OE
Output Buffer Turn-off Delay Time from OE
OE Command Hold Time
RAS Hold Time referenced to OE
OE "L" to CAS "H" Lead Time
CAS "H" to OE "L" Lead Time
tDH
8
—
10
— ns 7, 12
tDHR
35
—
40
— ns
tOED
12
—
12
— ns
tRWD
70
—
80
— ns 8
tAWD
45
—
50
— ns 8
tCWD
35
—
40
— ns 8
tDZC
0
—
0
— ns
tDZO
0
—
0
— ns
tOEA
—
15
—
18 ns
tOEZ
3
20
3
20 ns 5
tOEH
9
—
10
— ns
tROH
10
—
12
— ns
tOCH
10
—
10
— ns
tCHO
10
—
10
— ns
High-Z Command Pulse Width
WB/WE Pulse Width (Output Disable)
CAS Set-up Time for CAS before RAS Cycle
CAS Hold Time for CAS before RAS Cycle
RAS Precharge to CAS Active Time
CAS Precharge Time (Refresh Counter Test)
tOEP
10
—
12
— ns
tWPE
10
—
12
— ns
tCSR
8
—
10
— ns 12
tCHR
8
—
10
— ns 13
tRPC
10
—
10
— ns 12
tCPT
25
—
30
— ns 15
Refresh Period
WB Set-up Time
WB Hold Time
Write-Per-Bit Mask Data Set-up Time
tREF
—
8
—
8 ms
tWSR
0
—
0
— ns 16
tRWH
7
—
8
— ns 16
tMS
0
—
0
— ns 16
Write-Per-Bit Mask Data Hold Time
tMH
8
—
10
— ns 16
RAS Pulse Width (CAS before RAS Self-Refresh)
tRASS 100
—
100
— ms
RAS Precharge Time (CAS before RAS Self-Refresh) tRPS
110
—
130
— ns
CAS Hold Time (CAS before RAS Self-Refresh)
tCHS
0
—
0
— ns
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