CXK5B81020TM-12 查看數據表（PDF） - Sony Semiconductor
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CXK5B81020TM-12 Datasheet PDF : 9 Pages
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CXK5B81020J/TM
Electrical Characteristics
DC Characteristics
Item
Input leakage current
Output leakage current
Average operating current
Standby current
Output high voltage
Output low voltage
∗ Vcc = 3.3V, Ta = 25°C
Symbol
(Vcc = 3.3V ± 0.3V, GND = 0V, Ta = 0 to +70°C)
Conditions
Min. Typ.∗ Max Unit
ILI
VIN = GND to VCC
–10
—
+10 µA
CE = VIH or
ILO
OE = VIH or
WE = VIL
VI/O = GND to VCC
–10
—
+10 µA
Cycle: Min.
Duty = 100%
ICC
IOUT = 0mA
CE = VIL
VIN = VIH or VIL
—
—
240 mA
CE ≥ VCC – 0.2V
ISB1
VIN ≥ VCC – 0.2V or
VIN ≤ 0.2V
—
—
10 mA
Cycle: Min.
ISB2
Duty = 100%
CE = VIH
VIN = VIH or VIL
—
—
100 mA
VOH IOH = –2.0mA
2.4
—
—
V
VOL
IOL = 2.0mA
—
—
0.4
V
I/O Capacitance
Item
Symbol
Conditions
Input capacitance
CIN
VIN = 0V
I/O capacitance
CI/O
VI/O = 0V
Note) This parameter is sampled and is not 100% tested.
(Ta = 25°C, f = 1MHz)
Min.
Typ.
Max Unit
—
—
5
pF
—
—
7
pF
AC Characteristics
• AC test condition (Vcc = 3.3V ± 0.3V, Ta = 0 to +75°C)
Item
Condition
Input pulse high level
Input pulse low level
Input rise time
Input fall time
VIH = 3.0V
I/O
VIL = 0.0V
tr = 2ns
tf = 2ns
Input and output reference level 1.4V
Output load conditions
Fig. 1
Output load (1)
Zo = 50Ω
Output Load (2)∗1
3.3V
RL = 50Ω I/O
1179Ω
VL = 1.4V 5pF∗2
868Ω
∗1. tLZ, tOLZ, tHZ, tOHZ, tOW, tWHZ
∗2. Including scope and jig capacitances
Fig. 1
–3–
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