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RLS245TE11 查看數據表(PDF) - ROHM Semiconductor

零件编号
产品描述 (功能)
生产厂家
RLS245TE11
ROHM
ROHM Semiconductor ROHM
RLS245TE11 Datasheet PDF : 3 Pages
1 2 3
Diodes
RLS245
Leadless high voltage switching diode
RLS245
zApplications
High voltage switching
General purpose rectification
zExternal dimensions (Unit : mm)
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㪇㪅㪋
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zFeatures
1) Ultra small. (LLDS)
2) For surface mounting.
3) High voltage and high reliability.
zConstruction
Silicon epitaxial planar
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zLand size figure (Unit : mm)

4


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! zTaping specifications
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zStructure
㪇㪅㪊㪤㪘㪯
zAbsolute maximum ratings (Ta=25qC)
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Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak) VRM
250
V
Reverse voltage (DC)
VR
220
V
Forward current
IFM
625
mA
Average rectified forward current
Io
200
mA
Surge current 1s
Power dissipation
Isurge
1000
mA
P
300
mW
Junction temperature
Tj
175
Storage temperature
Tstg
-65 to +175
zElectrical characteristics (Ta=25qC)
Parameter
Symbol Min. Typ. Max.
Forward voltage
Reverse current
VF
-
-
1.5
IR
-
-
10
Capacitance between terminals
Ct
-
-
3.0
Reverse recovery time
Trr
-
-
75
Unit
Conditions
V
IF=200mA
μA
VR=220V
pF
VR=0V , f=1MHz
ns
IR=20mA,IF=20mA,RL=50
Rev.A
1/2

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