13007(2015) 查看數據表（PDF） - ON Semiconductor

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13007
(Rev.:2015)

Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications

ON Semiconductor 

MJE13007

Switch-mode NPN Bipolar

Power Transistor

For Switching Power Supply Applications

The MJE13007 is designed for high−voltage, high−speed power

switching inductive circuits where fall time is critical. It is particularly

suited for 115 and 220 V switch−mode applications such as Switching

Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and

Deflection circuits.

Features

• SOA and Switching Applications Information

• Standard TO−220

• These Devices are Pb−Free and are RoHS Compliant*

• Complementary to the MJE5850 through MJE5852 Series

MAXIMUM RATINGS

Rating

Collector−Emitter Sustaining Voltage

Collector−Base Breakdown Voltage

Emitter−Base Voltage

Collector Current − Continuous

Collector Current − Peak (Note 1)

Base Current

− Continuous

Base Current

− Peak (Note 1)

Emitter Current − Continuous

Emitter Current − Peak (Note 1)

Total Device Dissipation @ TC = 25_C

Derate above 25°C

Symbol

VCEO

VCES

VEBO

IC

ICM

IB

IBM

IE

IEM

PD

Value

400

700

9.0

8.0

16

4.0

8.0

12

24

80

0.64

Unit

Vdc

Vdc

Vdc

Adc

Adc

Adc

Adc

Adc

Adc

W

W/_C

Operating and Storage Temperature

TJ, Tstg −65 to 150 _C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

THERMAL CHARACTERISTICS

Characteristics

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient

Maximum Lead Temperature for Soldering

Purposes 1/8″ from Case for 5 Seconds

Symbol

RqJC

RqJA

TL

Max

1.56

62.5

260

Unit

_C/W

_C/W

_C

*Measurement made with thermocouple contacting the bottom insulated mounting

surface of the package (in a location beneath the die), the device mounted on a

heatsink with thermal grease applied at a mounting torque of 6 to 8lbs.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2015

1

January, 2015 − Rev. 9

www.onsemi.com

POWER TRANSISTOR

8.0 AMPERES

400 VOLTS − 80 WATTS

COLLECTOR

2,4

1

BASE

3

EMITTER

4

TO−220AB

CASE 221A−09

STYLE 1

123

MARKING DIAGRAM

MJE13007G

AY WW

A

= Assembly Location

Y

= Year

WW = Work Week

G

= Pb−Free Package

ORDERING INFORMATION

Device

Package

Shipping

MJE13007G

TO−220

(Pb−Free)

50 Units / Rail

Publication Order Number:

MJE13007/D

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