13007(2015) 查看數據表（PDF） - ON Semiconductor

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13007
(Rev.:2015)

Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications

ON Semiconductor 

MJE13007

TYPICAL CHARACTERISTICS

1.4

IC/IB = 5

1.2

1

0.8 TC = - 40°C

25°C

0.6

100°C

0.4

0.01 0.02

0.05 0.1 0.2 0.5 1 2

IC, COLLECTOR CURRENT (AMPS)

5 10

Figure 1. Base−Emitter Saturation Voltage

10

5

IC/IB = 5

2

1

0.5

0.2

TC = - 40°C

0.1

0.05

25°C

100°C

0.02

0.01

0.01 0.02 0.05 0.1 0.2 0.5 1 2

IC, COLLECTOR CURRENT (AMPS)

5 10

Figure 2. Collector−Emitter Saturation Voltage

3

TJ = 25°C

2.5

2

1.5

IC = 8 A

1

IC = 5 A

IC = 3 A

0.5

IC = 1 A

0

0.01 0.02 0.05 0.1 0.2

0.5 1 2 3 5 10

IB, BASE CURRENT (AMPS)

Figure 3. Collector Saturation Region

100

TJ = 100°C

25°C

10 40°C

VCE = 5 V

10000

Cib

1000

Cob

100

TJ = 25°C

1

0.01

0.1

1

IC, COLLECTOR CURRENT (AMPS)

Figure 4. DC Current Gain

10

10

0.1

1

10

100

1000

VR, REVERSE VOLTAGE (VOLTS)

Figure 5. Capacitance

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