13007(2015) 查看數據表（PDF） - ON Semiconductor
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13007
(Rev.:2015)
(Rev.:2015)
ON Semiconductor
13007 Datasheet PDF : 10 Pages
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MJE13007
Table 1. Test Conditions For Dynamic Performance
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
+15
V 1 mF
150 W
3 W
MPF930
+10 V
COMMON
Voff
50 W
500 mF
100 W
3 W
MPF930
MTP8P10
MTP8P10
MUR105 RB1
MJE210
A
RB2
150 W
3 W
MTP12N10
1 mF
100 mF
VCC
L
MUR8100E
IB
IB
IC
Vclamp = 300 Vdc
5.1 k
TUT
VCE
51
RESISTIVE
SWITCHING
+125
V
RC
RB TUT
SCOPE
D
1
- 4 V
IC
ICM
t1
VCE
VCEM
TIME
V(BR)CEO(sus)
L = 10 mH
RB2 = 8
VCC = 20 Volts
IC(pk) = 100 mA
Inductive
Switching
L = 200 mH
RB2 = 0
VCC = 15 Volts
RB1 selected for
desired IB1
RBSOA
L = 500 mH
RB2 = 0
VCC = 15 Volts
RB1 selected for
desired IB1
tf CLAMPED
tf UNCLAMPED ≈ t2
t
tf
Vclamp
t
t2
t1 ADJUSTED TO
OBTAIN IC
t1 ≈
Lcoil (ICM)
VCC
t2 ≈
Lcoil (ICM)
Vclamp
TEST EQUIPMENT
SCOPE — TEKTRONIX
475 OR EQUIVALENT
TYPICAL
WAVE-
FORMS
VCE PEAK
VCE
IB1
IB
IB2
VCC = 125 V
RC = 25
WD1 = 1N5820 OR
EQUIV.
+11 V
25 ms
0
9V
tr, tf < 10 ns
DUTY CYCLE = 1.0%
RB AND RC ADJUSTED
FOR DESIRED IB AND IC
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