MJE18009 查看數據表（PDF） - ON Semiconductor

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MJE18009

SWITCHMODE™ NPN Silicon Planar Power Transistor

ON Semiconductor 

ON Semiconductort

SWITCHMODE™ NPN Silicon

Planar Power Transistor

The MJE/MJF18009 has an application specific state–of–the–art die

designed for use in 220 V line–operated SWITCHMODE Power

supplies and electronic ballast (“light ballast”). These high

voltage/high speed transistors exhibit the following main features:

• Improved Efficiency Due to Low Base Drive Requirements:

High and Flat DC Current Gain hFE

Fast Switching

No Coil Required in Base Circuit for Turn–Off (No Current Tail)

• Full Characterization at 125_C

• ON Semiconductor “6 SIGMA” Philosophy Provides Tight and

Reproducible Parametric Distributions

• Specified Dynamic Saturation Data

• Two Package Choices: Standard TO–220 or Isolated TO–220

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Sustaining Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Breakdown Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Base Breakdown Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter–Base Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current — Continuous

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ — Peak(1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current — Continuous

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ — Peak(1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *Total Device Dissipation @ TC = 25°C

*Derate above 25_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Temperature

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ RMS Isolation Voltage (2) Per Figure 22

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (1s, 25°C, Humidity ≤ 30%) Per Figure 23

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ TC = 25°C

Per Figure 24

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance — Junction to Case

— Junction to Ambient

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Maximum Lead Temperature for Soldering

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Purposes: 1/8″ from Case for 5 Seconds

Symbol MJE18009 MJF18009 Unit

VCEO

VCES

VCBO

VEBO

IC

ICM

IB

IBM

PD

450

1000

1000

9

10

20

4

8

150

50

1.2

0.4

Vdc

Vdc

Vdc

Vdc

Adc

Adc

Watt

W/_C

TJ, Tstg

VISOL1

VISOL2

VISOL3

–65 to 150

_C

4500

V

3500

1500

Symbol MJE18009 MJF18009 Unit

RθJC

RθJA

0.83

62.5

2.5

_C/W

62.5

TL

260

_C

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.

(2) Proper strike and creepage distance must be provided.

MJE18009

MJF18009

POWER TRANSISTORS

10 AMPERES

1000 VOLTS

50 and 150 WATTS

CASE 221A–06

TO–220AB

CASE 221D–02

TO–220 FULLPACK

© Semiconductor Components Industries, LLC, 2001

1

April, 2001 – Rev. 2

Publication Order Number:

MJE18009/D

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