BH6150F 查看數據表（PDF） - ROHM Semiconductor
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BH6150F Datasheet PDF : 8 Pages
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Memory ICs
BH6150F
•Electrical characteristics (unless otherwise specified VCC = 4.5V to 5.5V and Ta = 25°C)
Reset circuit 1
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Detection voltage
Hysteresis voltage
High level transmission delay time
Low level transmission delay time
Output low level voltage
Input voltage range
Input current
VS1
∆VS1
TPLH1
TPHL1
VOL1
VIN
IIN
1.20
9
80
—
—
– 0.3
—
1.25 1.30
15
23
200
500
10
—
0.1
0.4
—
VCC
200
500
V
—
mV
—
µs CL = 100pF
µs CL = 100pF
V
VIN < 1.2V, IOL = 5mA
V
—
nA VIN = 1.25V
Reset circuit 2
Parameter
Detection voltage
Hysteresis voltage
High level transmission delay time
Low level transmission delay time
Output low level voltage
Manual reset Input high level voltage
Input high level current
Input low level voltage
Symbol
VS2
∆VS2
TPLH2
TPHL2
VOL2
VRESH
IRESH
VRESL
Min.
4.0
30
15
30
60
120
—
—
2
—
– 0.3
Typ.
4.2
50
25
50
100
200
0.5
0.1
—
20
—
Max.
4.4
100
35
70
140
280
—
0.4
VCC
80
0.8
Unit
Conditions
V
—
mV
—
ms Ct0 = L, Ct1 = H
ms Ct0 = H, Ct1 = L
CL = 100pF
ms Ct0 = H, Ct1 = H
ms Ct0 = L, Ct1 = L
µs CL = 100pF
V
VCC < 4V, IOL = 5mA
V
—
µA VRES = 2V
V
—
Common specifications
Parameter
Symbol Min. Typ. Max.
Circuit current when off
Circuit current when on
Detection voltage temperature coefficient
Output high level voltage
Operation limit voltage
ICC1
ICC2
VS / ∆T
VOH1,2
VOPL1,2
—
1000
—
2
—
0.01
VCC – 0.7 VCC – 0.4
—
0.71
1400
3
—
—
0.85
Unit
µA
mA
% / °C
V
V
Conditions
VCC = 5V, VIN > VS1
VCC = 4V, VIN < VS1
—
IOH = 40µA
VSAT Ϲ 0.4V, RL = 1K
4
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