L6280 查看數據表（PDF） - STMicroelectronics
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L6280 Datasheet PDF : 26 Pages
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L6280
ELECTRICAL CHARACTERISTICS (VS = 20V; Tj = 25°C; VSS = 5V; VDHS =15V; RO =165KΩ;
CO =680pF; unless otherwise specified)
Symbol
IDSS
Vs
VINL
IINL
VINH
IINH
VROUT
VPF
IS
VSS
ISS(IN)
ISS(OUT)
fosc
f1
f1max
f2
f3
TSD
tWD
tD
RON
SENSE
Vref
DAC
tC
VDHS
IDHS
ISS (OUT) max
VDLS
VSSF
VFHSD (1;2)
VFLSD
(1AB;2AB)
VF HSD
Parameter
Leakage Current
Power Supply Voltage
Low Level Input Voltage
Low Level Input Current
High Level Input Voltage
High Level Input Current
Low Level Reset Out
Power Supply Fail Voltage
Quiescent Supply Current
Logic Supply Voltage
Logic Supply Current
SMPS Out Current Range
Oscillator Frequency
SMPS and CH3 Frequency
Max SMPS Switching Frequency
PWM Frequency
High Side Driver Switching
Frequency
Thermal Shutdown
Monostable Watchdog Time
Reset Delay Time
ON State Drain Resistance
Transistor LSD CH1 - CH2
HSD CH1 - CH2
LSD CH3
HSD CH3
SMPS
Internal Sense LOW-Pass Filter
DAC Reference Voltage
DAC Resolution (3 Bit)
Discarge Time of Cosc
Capacitor (Minimum TON)
HSD Gates Voltage Drive
Pin 13 Overage Input Current
SMPS Overload Protection
Current
Pin 21 Overage Input Voltage
Logic VSS Fail Threshold Voltage
Internal Clamp Diode Forward
Voltage CH1/CH2
Internal Clamp Diode Forward
Voltage CH1/CH2
Internal Clamp Diode Forward
Voltage CH3
Test Condition
Fig. 1 VDS = 60V
Note 1,2
I16 = 1.5mA
(Fig. 2)
VS = 12V
Note 3
CWD = 0.22µF (Note 4)
CD = 0.22µF; Fig.2 (Note 5)
Fig 3; 4ab
D0=D1=D2 =1 (Table 1)
(See Table 1)
(Note 6)
(Fig. 2)
@ IDS = 0.4A (Fig. 5)
@ IDS = 0.4A (Fig. 5)
@ IDS = 1A (Fig. 5)
Min. Typ. Max. Unit
2
mA
>VPF
48
V
-0.3
1.35
V
-10
µA
3.15
VSS
V
10
µA
0.8
V
13
V
4.5
6
7.5
mA
4.75
5
5.25
V
4.5
6
7.5
mA
800 mA
64
80
96 KHz
fosc
KHz
120 KHz
fosc/2
KHz
fosc/4
KHz
125 150
°C
6.6
ms
15.4
ms
2
2.4
Ω
1.1
1.4
Ω
0.5
0.8
Ω
0.5
0.8
Ω
1
1.2
Ω
300 500
ns
1
V
Vref/8
V
0.4
µs
13
15
17
V
3
mA
1.2
A
12
V
2.6
4.1
V
1.2
V
1.4
V
1.1
V
4/26
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