MTP3N50E 查看數據表（PDF） - Motorola => Freescale

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MTP3N50E

TMOS E-FET™ High Energy Power FET

Motorola => Freescale 

MTP3N50E

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0, ID = 0.25 mA)

V(BR)DSS

500

—

—

Vdc

Zero Gate Voltage Drain Current

(VDS = 500 V, VGS = 0)

(VDS = 400 V, VGS = 0, TJ = 125°C)

Gate–Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0)

Gate–Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0)

IDSS

mAdc

—

—

0.25

—

—

1.0

IGSSF

—

—

100

nAdc

IGSSR

—

—

100

nAdc

ON CHARACTERISTICS*

Gate Threshold Voltage

(VDS = VGS, ID = 0.25 mAdc)

(TJ = 125°C)

Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 1.5 Adc)

Drain–Source On–Voltage (VGS = 10 Vdc)

(ID = 3.0 A)

(ID = 1.5 A, TJ = 100°C)

Forward Transconductance (VDS = 15 Vdc, ID = 1.5 Adc)

VGS(th)

Vdc

2.0

—

4.0

1.5

—

3.5

RDS(on)

—

2.4

3.0

Ohm

VDS(on)

Vdc

—

—

10

—

—

8.0

gFS

1.0

—

—

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

(VDS = 25 V, VGS = 0,

f = 1.0 MHz)

Ciss

Coss

Crss

—

435

—

pF

—

56

—

—

9.2

—

SWITCHING CHARACTERISTICS*

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

(VDD = 250 V, ID ≈ 3.0 A,

RG = 18 Ω, RL = 83 Ω,

VGS(on) = 10 V)

(VDS = 400 V, ID = 3.0 A,

VGS = 10 V)

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

—

14

—

ns

—

14

—

—

30

—

—

20

—

—

15

21

nC

—

2.5

—

—

10

—

SOURCE–DRAIN DIODE CHARACTERISTICS*

Forward On–Voltage

(IS = 3.0 A)

Forward Turn–On Time

Reverse Recovery Time

(IS = 3.0 A, di/dt = 100 A/µs)

VSD

ton

trr

—

—

1.5

Vdc

—

**

—

ns

—

200

—

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the contact screw on tab to center of die)

(Measured from the drain lead 0.25″ from package to center of die)

Ld

nH

—

3.5

—

—

4.5

—

Internal Source Inductance

Ls

(Measured from the source lead 0.25″ from package to source bond pad)

—

7.5

—

* Indicates Pulse Test: Pulse Width = 300 µs Max, Duty Cycle ≤ 2.0%.

** Limited by circuit inductance.

2

Motorola TMOS Power MOSFET Transistor Device Data

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