MTP3N50E 查看數據表（PDF） - Motorola => Freescale
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MTP3N50E Datasheet PDF : 8 Pages
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MTP3N50E
10
VGS = 20 V
SINGLE PULSE
TC = 25°C
1
0.1
SAFE OPERATING AREA INFORMATION
1 µs
16
10 µs
12
100 µs
1 ms
8
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
dc
4
TJ ≤ 150°C
0.01
1
10
100
1000
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 7. Maximum Rated Forward Biased
Safe Operating Area
0
0
100
200
300
400
500
600
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 8. Maximum Rated Switching
Safe Operating Area
FORWARD BIASED SAFE OPERATING AREA
The FBSOA curves define the maximum drain–to–source
voltage and drain current that a device can safely handle
when it is forward biased, or when it is on, or being turned on.
Because these curves include the limitations of simultaneous
high voltage and high current, up to the rating of the device,
they are especially useful to designers of linear systems. The
curves are based on a case temperature of 25°C and a maxi-
mum junction temperature of 150°C. Limitations for repetitive
pulses at various case temperatures can be determined by
using the thermal response curves. Motorola Application
Note, AN569, “Transient Thermal Resistance–General Data
and Its Use” provides detailed instructions.
SWITCHING SAFE OPERATING AREA
The switching safe operating area (SOA) of Figure 8 is the
boundary that the load line may traverse without incurring
damage to the MOSFET. The fundamental limits are the
peak current, IDM and the breakdown voltage, V(BR)DSS. The
switching SOA shown in Figure 8 is applicable for both turn–
on and turn–off of the devices for switching times less than
one microsecond.
1000
VDD = 250 V
ID = 3 A
VGS = 10 V
TJ = 25°C
100
td(off)
td(on)
tf
10
tr
1
1
10
100
1000
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
1
0.7 D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1 0.05
0.07
0.05 0.02
0.03
0.01
0.02 SINGLE PULSE
0.01
0.01 0.02 0.03 0.05 0.1
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
RθJC(t) = r(t) RθJC
RθJC = 2.5°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
0.2 0.3 0.5 1
23 5
10
20 30 50
t, TIME (ms)
Figure 10. Thermal Response
100 200 300 500 1000
4
Motorola TMOS Power MOSFET Transistor Device Data
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