MTW7N80E 查看數據表（PDF） - Motorola => Freescale

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MTW7N80E

TMOS E−FET Power Field Effect Transistor TO-247 with Isolated Mounting Hole

Motorola => Freescale 

MTW7N80E

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

800

—

—

Vdc

—

1,030

—

mV/°C

Zero Gate Voltage Drain Current

(VDS = 800 Vdc, VGS = 0 Vdc)

(VDS = 800 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Temperature Coefficient (Negative)

IDSS

IGSS

µAdc

—

—

10

—

—

100

—

—

100

nAdc

VGS(th)

2.0

3.0

4.0

Vdc

—

7.0

—

mV/°C

Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 3.5 Adc)

Drain–Source On–Voltage (VGS = 10 Vdc)

(ID = 7.0 Adc)

(ID = 3.5 Adc, TJ = 125°C)

Forward Transconductance (VDS = 15 Vdc, ID = 3.5 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 400 Vdc, ID = 7.0 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

Gate Charge

(See Figure 8)

(VDS = 400 Vdc, ID = 7.0 Adc,

VGS = 10 Vdc)

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (1)

(IS = 7.0 Adc, VGS = 0 Vdc)

(IS = 7.0 Adc, VGS = 0 Vdc, TJ = 125°C)

RDS(on)

VDS(on)

gFS

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

QT

Q1

Q2

Q3

VSD

—

0.87

1.0

Ohm

Vdc

—

6.8

10

—

—

10.5

4.0

7.63

—

mhos

—

3000

4160

pF

—

244

490

—

46

90

—

20

40

ns

—

37

85

—

84

165

—

49

105

—

70

105

nC

—

13

—

—

28

—

—

23

—

Vdc

—

0.817

1.14

—

0.7

—

Reverse Recovery Time

(See Figure 14)

(IS = 7.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

Reverse Recovery Stored Charge

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)

trr

ta

tb

QRR

LD

—

651

—

ns

—

164

—

—

487

—

—

4.78

—

µC

—

4.5

—

nH

Internal Source Inductance

LS

(Measured from the source lead 0.25″ from package to source bond pad)

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

—

13

—

nH

2

Motorola TMOS Power MOSFET Transistor Device Data

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