MMDF2P02ER2 查看數據表（PDF） - Motorola => Freescale

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MMDF2P02ER2

TMOS Dual P-Channel Field Effect Transistors

Motorola => Freescale 

MMDF2P02E

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

Vdc

25

—

—

—

2.2

—

mV/°C

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc)

(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

ON CHARACTERISTICS(2)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Temperature Coefficient (Negative)

IDSS

IGSS

µAdc

—

—

1.0

—

—

10

—

—

100

nAdc

VGS(th)

Vdc

1.0

2.0

3.0

–

3.8

–

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 2.0 Adc)

(VGS = 4.5 Vdc, ID = 1.0 Adc)

Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS(3)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 10 Vdc, ID = 2.0 Adc,

VGS = 5.0 Vdc,

RG = 6.0 Ω)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 10 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc,

RG = 6.0 Ω)

Gate Charge

(VDS = 16 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage(2)

(IS = 2.0 Adc, VGS = 0 Vdc)

Reverse Recovery Time

See Figure 11

(IS = 2.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

Reverse Recovery Storage Charge

(1) Negative sign for P–Channel device omitted for clarity.

(2) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(3) Switching characteristics are independent of operating junction temperature.

RDS(on)

gFS

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

td(on)

tr

td(off)

tf

QT

Q1

Q2

Q3

VSD

trr

ta

tb

QRR

Ohm

—

0.19

0.25

—

0.3

0.4

1.0

2.8

—

Mhos

—

340

475

pF

—

220

300

—

75

150

—

20

40

ns

—

40

80

—

53

106

—

41

82

—

13

26

—

29

58

—

30

60

—

28

56

—

10

15

nC

—

1.0

—

—

3.5

—

—

3.0

—

—

1.5

2.0

Vdc

—

32

64

ns

—

19

—

—

12

—

—

0.035

—

µC

2

Motorola TMOS Power MOSFET Transistor Device Data

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