ESDA6V1BC6(2002) 查看數據表（PDF） - STMicroelectronics

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ESDA6V1BC6
(Rev.:2002)

QUAD BIDIRECTIONAL TRANSIL SUPPRESSOR FOR ESD PROTECTION

STMicroelectronics 

ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)

Symbol

Test conditions

VPP

ESD discharge - MIL STD 883C - Method 3015-6

IEC61000-4-2 air discharge

IEC61000-4-2 contact discharge

PPP

Peak pulse power (8/20µs)

Tj

Junction temperature

Tstg

Storage temperature range

TL

Lead solder temperature (10 second duration)

Top

Operating temperature range (note 1)

Note 1: Variation of parameters is given by curves.

ELECTRICAL CHARACTERISTICS (Tamb = 25°C)

Symbol

Parameter

VRM

Stand-off voltage

VBR

Breakdown voltage

VCL

Clamping voltage

IRM

Leakage current

IPP

Peak pulse current

C

Capacitance

Rd

Dynamic resistance

VBR

VCL

VRM

Rd

ESDA6V1BC6

Value

Unit

25

kV

15

8

80

W

150

°C

-55 to +150 °C

260

°C

-40 to +125

°C

I

I RM

V

I PP

Type

VBR @ IR IRM @ VRM

min. max.

max.

V

V

mA µA

V

ESDA6V1BC6

6.1

8

1

1

5

Note 1 : Square pulse, Ipp = 3A, tp=2.5µs.

Rd

typ.

note 1

Ω

1.35

αT

max.

10-4/°C

3

C

typ.

0V bias

pF

20

3/6

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