VSC7711 查看數據表（PDF） - Vitesse Semiconductor

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VSC7711

Transimpedance Amplifier Family for Optical Communication

Vitesse Semiconductor 

VITESSE

SEMICONDUCTOR CORPORATION

Transimpedance Amplifier

Family for Optical Communication

Advance Product Information

VSC7711

Table 1: Electrical Characteristics of Transimpedance Amplifiers (VS = 5V & T = 25°C unless otherwise noted)

Symbol

VDD

Is

BW

Fc

Tr, Tf

Parameter

Supply Voltage

Supply Current

Optical Modulation

Bandwidth

Low Frequency Cutoff

Output Rise & Fall Time

Rd

Imax

In

In

PDJ

Ro

Vmax

VB

Voff

PSRR

Differential Transresistance

Output Drive Current

Input Noise Equivalent

Current

Input Noise Equivalent

Current Spectral Density

Pattern Dependent Jitter

Single Ended Output

Impedance

Maximum Differential

Output Voltage

Output Bias Voltage

Output Offset Voltage

Power Supply Rejection

Ratio

Min.

4.5

—

800

—

3.5

1.5

—

Max.

5.5

62

1.5

250

—

—

180

Units

V

mA

MHz

MHz

ps

kΩ

mApp

nA RMS

Conditions

—

Iin 4µApp to 1.5mApp

Iin = 20µApp, detector capacitance = 0.6pf

Iin = 20µApp

20% to 80%

Iin-1.0mApp

RL = 100Ω, differential

Iin= 20µA

10% Duty Cycle Distortion

BW = 800 MHz

—

6.4 pA/ √Hz BW = 800 MHz

—

60

ps

25

75

Ω

—

—

700

MVpp

Iin = 1.0mApp

RL = 100Ω, differential

0.5

1.7

V

—

0.15

V

—

35

—

dB

f = 0.3MHz - 40MHz, with external filter

Table 2: Absolute Maximum Ratings

Symbol

Parameter

VDD

Tstg

Power Supply

Storage Temperature

Table 3: Recommended Operating Conditions

Symbol

VDD

Top

Parameter

Power Supply

Operating Temperature

Limits

6V

-55°C to 125°C (die temperature under bias)

Limits

4.5-5.5V (5.0V nominal)

0°C (ambient) to 80°C (die)

Page 2

© VITESSE SEMICONDUCTOR CORPORATION

741 Calle Plano, Camarillo, CA 93012 • 805/388-3700 • FAX: 805/987-5896

G52178-0, Rev 2.1

10/6/99

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