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VSC7711 查看數據表(PDF) - Vitesse Semiconductor

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VSC7711 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
VITESSE
SEMICONDUCTOR CORPORATION
Transimpedance Amplifier
Family for Optical Communication
Advance Product Information
VSC7711
Thermal Resistance Calculation For Bare Die
In order to relate the junction temperature to the temperature of the back side of the bare die, the following
thermal characteristics of the package are provided
Table 5: Thermal Resistance Calculation for Bare Die.
Chip Size
Chip Area A
Die height (Tdie)
0.168cm x 0.104cm
0.015 cm2
0.066 cm
K GaAs
Thermal Conductivities
0.55W / cm °C
Thermal Path
Tj
θGaAs
Tb
θGaAs =
Tdie
KGaAsA
=
0.066
0.55 x 0.015
= 8°C/W
θJB = Thermal Resistance from Junction to back = 8°C/W
Example:
For VSC7711 at nominal supply current of 25mA and VDD = 5V
Temperature rise from junction to back = 0.025A x 5V x 8°C/W = 1°C
Page 4
© VITESSE SEMICONDUCTOR CORPORATION
741 Calle Plano, Camarillo, CA 93012 • 805/388-3700 • FAX: 805/987-5896
G52178-0, Rev 2.1
10/6/99

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