IN74HC11D 查看數據表（PDF） - Integral Corp.

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IN74HC11D

Triple 3-Input AND Gate High-Performance Silicon-Gate CMOS

Integral Corp. 

IN74HC11

AC ELECTRICAL CHARACTERISTICS(CL=50pF,Input tr=tf=6.0 ns)

Symbol

Parameter

VCC

Guaranteed Limit

V 25 °C ≤85°C ≤125°C Unit

to

-55°C

tPLH, tPHL Maximum Propagation Delay, Input A ,B or C to 2.0 125

155

190

ns

Output Y (Figures 1 and 2)

4.5 25

31

38

6.0 21

26

32

tTLH, tTHL Maximum Output Transition Time, Any Output

2.0

75

(Figures 1 and 2)

4.5 15

6.0 13

95

110

ns

19

22

16

19

CIN Maximum Input Capacitance

-

10

10

10

pF

Power Dissipation Capacitance (Per Gate)

CPD Used to determine the no-load dynamic power

consumption:

PD=CPDVCC2f+ICCVCC

Typical @25°C,VCC=5.0 V

27

pF

.Figure 1. Switching Waveforms

Figure 2. Test Circuit

EXPANDED LOGIC DIAGRAM

(1/3 of the Device)

54

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