L9380(1998) 查看數據表（PDF） - STMicroelectronics

零件编号

产品描述 (功能)

生产厂家

L9380
(Rev.:1998)

TRIPLE HIGH-SIDE MOSFET DRIVER

STMicroelectronics 

L9380

TYPICAL CHARACTERISTICS

Depending on production spread, certain deviations may occure. For limits (see pag. 4)

Figure 8. Charge Loading Time as function of VS

(Vcp = 8V +VS)

Figure 9. Charge Pump Current as function of

the Charge Voltage

tCH

(ms)

D98AT396

ICP

(µA)

D98AT397

20

68nF

10

33nF

10nF

0

6

8

10 12 14 16 VS(V)

Figure 10. Ground Loss Protection Gate Dis-

carge Current for Source Voltage

IG

(µA)

D98AT398

-200

-400

-600

-800

-1000

-15

-10

-5

VS(V)

Figure 12. Overvoltage Shutdown of the Charge

Pump with Hysteresis

VCH

(V)

D98AT400

100

16V

12V

10V

50

7V

0

7

17

27

VC(V)

Figure 11. Input Current as function of the Input

Voltage

IC

(µA)

D98AT399

-5

-10

-15

-20

0

1

2

3

4 VI(V)

30

20

24

24.5

25

25.5

VS(V)

8/12

Share Link: