EB01 查看數據表（PDF） - Apex Microtechnology
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EB01 Datasheet PDF : 4 Pages
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EB01
OPERATING
CONSIDERATIONS
POWER SUPPLY REQUIREMENTS
SUPPLY
HV1
HV2
HV3
Vcc1
Vcc2
Vcc3
Vdd
VOLTAGE
50V to 500V
50V to 500V
50V to 500V
10V to 20V
10V to 20V
10V to 20V
4.5 to 20V
MAX CURRENT
20A, continuous, 28A peak
20A, continuous, 28A peak
20A, continuous, 28A peak
10mA
10mA
10mA
10mA
HV1, HV2, and HV3 may be used independently, or may
be one supply. Also Vcc1, Vcc2, and Vcc3 may be used
independently or tied together. The Vdd supply must be
compatible with the input logic. If a high voltage logic such as
CMOS is used it may be tied with the Vcc supplies. HCMOS
requires a 5V±10% supply
SPECIAL CONSIDERATIONS
GENERAL
The EB01 is designed to give the user maximum flexibility
in a digital or DSP based motion control system. Thermal,
overvoltage, overcurrent, and crossfire protection circuits are
part of the user’s design.
Users should read Application Note 1, "General Operating
Considerations;” and Application Note 30, “PWM Basics”
for much useful information in applying this part. These
Application Notes are in the “Power Integrated Circuits Data
Book” and on line at www.apexmicrotech.com.
GROUNDING AND BYPASSING
As in any high power PWM system, grounding and
bypassing are one of the keys to success. The EB01 is
capable of generating 20 kW pulses with 100 n-second rise
and fall times. If improperly grounded or bypassed this can
cause horrible conducted and radiated EMI.
In order to reduce conducted EMI, the EB01 provides a
separate power ground, named HVRTN, for each high voltage
supply. These grounds are electrically isolated from the logic
ground (Vss) and each other. This isolation eliminates high
current ground loops. However, more than 5V offset between
the grounds will destroy the EB01. Apex recommends
back to back high current diodes between logic and power
grounds; this will maintain isolation but keep offset at a
safe level. All grounds should tie together at one common
point in the system.
In order to reduce radiated EMI, Apex recommends a
400 µF or larger capacitor between HV and HVRTN. This
capacitor should be a a switching power grade electrolytic
capacitor with ESR rated at 20 kHz. This capacitor should be
placed physically as close to the EB01 as possible.
However, such a capacitor will typically have a few
hundred milli-ohms or so ESR. Therefore, each section
must also be bypassed with a low ESR 1µF or larger
ceramic capacitor.
In order to minimize radiated noise it is necessary to
minimize the area of the loop containing high frequency
current. (The size of the antenna.) Therefore the 1µF ceramic
capacitors should bypass each HV to its return right at
the pins the EB01.
SHOOT THROUGH PROTECTION
IGBTs have a relatively short turn on delay, and a long
turn off delay. Unlike most semiconductor devices the turn off
delay cannot be improved very much by drive circuit design.
Therefore, if the turn on input to an IGBT in a half bridge
circuit is applied simultaneously with the turn off input to
the other IGBT in that half bridge, there will be a time when
both IGBTs are simultaneously on. This will short the power
rails through the IGBTs, causing excessive power dissipation
and very high EMI.
To avoid the shoot through condition the turn on of one
IGBT must be delayed long enough for the other in the same
half bridge to have completely turned off.
A delay of at least 1.5 µ-seconds is required for the EB01.
This delay must be provided after turning off Lin before Hin
of the same half bridge may be turned on; likewise it must
be provided after turning off Hin before Lin of the same half
bridge may be turned on.
PROTECTION CIRCUITS
The EB01 does not include protection circuits.
However, there is a shut down input which will turn off all
IGBTs when at logic “1”. This input may be used with user
designed temperature sensing and current sensing circuits
to shut down the IGBTs in the event of a detected unsafe
condition. This is recommended since the IGBTs may be
turned off this way even if the normal input logic or DSP
programming is faulty.
START-UP REQUIREMENTS
In order for an IGBT to be turned on, the corresponding
logic input signal must make its positive transition after SD
has been low for at least 1 µ-second.
The lower rail IGBT in the half bridge must be turned on
for at least 2 µ-seconds to charge the bootstrap capacitor
before the top rail IGBT can be turned on. This must be done
no more than 330 µ-seconds prior to turning on the top rail
IGBT. However, if the load pulls the output to ground, the
positive rail IGBT can be turned on without first briefly turning
on the negative rail IGBT.
An internal floating supply is used to enhance the operation
of the bootstrap bias circuit. This allows the top rail IGBTs to
be held on indefinitely once turned on.
HEATSINK
The EB01 should be provided with sufficient heatsink to
dissipate 179 watts while holding a case temperature of
25°C when operating at 500V, 20A, 30kHz and 3 sections
simultaneously providing maximum current.
The dissipation is composed of conduction losses (IoutxVsat)
up to 54 watts per half bridge and switching losses of about 4
watts per half bridge. The conduction losses are proportional
to Iout; switching losses are proportional to HV supply voltage
and to switching frequency.
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EBO1U REV. B JANUARY 2001 © 2001 Apex Microtechnology Corporation
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