TISP7072F3DR 查看數據表（PDF） - Power Innovations
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TISP7072F3DR Datasheet PDF : 22 Pages
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TISP7072F3, TISP7082F3
TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
MARCH 1994 - REVISED MARCH 2000
electrical characteristics for all terminal pairs, TA = 25 °C (unless otherwise noted)
IDRM
PARAMETER
Repetitive peak off-
state current
V(BO) Breakover voltage
Impulse breakover
V(BO) voltage
I(BO)
VT
IH
dv/dt
ID
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
Coff Off-state capacitance
TEST CONDITIONS
VD = VDRM, 0 °C < TA < 70 °C
dv/dt = ±250 V/ms, RSOURCE = 300 Ω
dv/dt ≤ ±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
dv/dt = ±250 V/ms, RSOURCE = 300 Ω
IT = ±5 A, tW = 100 µs
IT = ±5 A, di/dt = +/-30 mA/ms
Linear voltage ramp, Maximum ramp value < 0.85VDRM
VD = ±50 V
f = 1 MHz, Vd = 1 V rms, VD = 0
f = 1 MHz, Vd = 1 V rms, VD = -1 V
f = 1 MHz, Vd = 1 V rms, VD = -2 V
f = 1 MHz, Vd = 1 V rms, VD = -5 V
f = 1 MHz, Vd = 1 V rms, VD = -50 V
MIN TYP
‘7072F3
‘7082F3
‘7072F3
‘7082F3
±0.1
±0.15
±5
53
56
51
43
25
MAX
±10
±72
±82
±90
±100
±0.8
±5
±10
69
73
66
56
33
UNIT
µA
V
V
A
V
A
kV/µs
µA
pF
f = 1 MHz, Vd = 1 V rms, VDTR = 0
(see Note 4)
29
37
NOTE 4: Three-terminal guarded measurement, unmeasured terminal voltage bias is zero. First five capacitance values, with bias VD, are
for the R-G and T-G terminals only. The last capacitance value, with bias VDTR, is for the T-R terminals.
PRODUCT INFORMATION
3
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