TPN3021(1998) 查看數據表（PDF） - STMicroelectronics
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TPN3021 Datasheet PDF : 4 Pages
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TPN3021
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Symbol
VRM
VBO
VBR
IH
IBO
IRM
IPP
C
αT
Parameter
Stand-off voltage
Breakover voltage
Breakdown voltage
Holding current
Breakover current
Leakage current at VRM
Peak pulse current
Capacitance
Temperature coefficient
I
IPP
IBO
IH
IRM
V
V
RM
VBO
Type
TPN3021
IRM @ VRM
max.
note 1
µA
V
4
28
VBO @ IBO
max.
V
mA
38
100
IH
min.
note 2
mA
30
C
typ.
max.
note 3
pF
pF
25
30
αT
typ.
note 4
10-4/°C
8
Note 1 : Between any I/O pin and Ground or between I/O1 and I/O2.
Note 2 : See the functional holding current (IH) test circuit.
Note 3 : Between any I/O pin and GND or between I/O1 and I/O2 at 0V bias, VRMS = 30 mV, F = 1 MHz.
Note 4 : ∆VBO = αT x (Tamb - 25) x VBO(25°C).
FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT : GO-NO GO TEST
VBAT =
- 48 V
R
- VP
D.U.T
Surge generator
This is a GO-NO GO test which allows to confirm the holding current (IH) level in a functional test circuit.
TEST PROCEDURE :
- Adjust the current level at the IH value by short circuiting the D.U.T.
- Fire the D.U.T. with a surge current : Ipp = 10A, 10/1000 µs.
- The D.U.T. will come back to the off-state within a duration of 50 ms max.
2/4
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