TEA8172 查看數據表（PDF） - Temic Semiconductors
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TEA8172 Datasheet PDF : 4 Pages
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TEA 8172
TELEFUNKEN Semiconductors
Absolute Maximum Ratings
Parameters
Symbol
Value
Unit
Supply voltage
Pin 2
VS
35
V
Flyback peak voltage
Pins 5 and 6
V5, 6
60
V
Voltage at pin 3
V3
VS
V
Input voltage
Pins 1 and 7
V1, 7
VS
V
Output peak current:
t = 2 ms, non repetitive
v m f = 50/60 Hz, t 10 s
m f = 50/60 Hz, t > 10 s
Pin 5
IO
A
2.5
3.0
2.0
DC current at pin 3, V5 < V2
Flyback current peak to peak,
f= 50/60 Hz, tfly ≤ 1.5 ms
Power dissipation, Tcase = 70°C
Storage temperature
Junction temperature
Pin 3
I3
100
mA
I3
3
A
Ptot
20
W
Tstg
– 40 to + 150
°C
Tj
– 40 to + 150
°C
Thermal Resistance
Junction case
Parameters
Symbol
RthJC
Maximum
3
Unit
K/W
Electrical Characteristics
VS = 35 V, Tamb = 25°C, reference point Pin 4 (GND), see test circuits, unless otherwise specified
Parameters
Test Conditions / Pin
Symbol Min
Typ
Max
Unit
Quiescent current
Input quiescent current
I3 = 0, IS = 0
I3 = 0, IS = 0
figure 2
V1 = 1 V
figure 3
Pin 2
I2
Pin 6
I6
Pin 1
–I1
8
16
mA
16
36
0.1
1
mA
Saturation voltage to GND I3 = 20 mA
Pin 3
V3-4
figure 4
Output voltage
W VS = 35 V, Rr = 39 k
V5
figure 5
Pin 5
1
1.5
V
18
V
Saturation voltage to GND
I5 = 0.7 A
I5 = 1.2 A
figure 6
Pin 5
V5-4
0.7
1.0
V
1.0
1.4
Saturation voltage to
supply
I5 = – 0.7 A
I5 = – 1.2 A
figure 7
Pin 5
V5-6
1.3
1.8
V
1.6
2.2
Junction temperature for
thermal shut down
Tj
140
°C
2
Rev. A1: 17.07.1995
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