HAL573SF-K 查看數據表（PDF） - Micronas

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HAL573SF-K

Two-Wire Hall-Effect Sensor Family

Micronas 

HAL57x, HAL58x

DATA SHEET

Two-Wire Hall-Effect Sensor Family

in CMOS technology

Release Note: Revision bars indicate significant

changes to the previous edition.

1. Introduction

This sensor family consists of different two-wire Hall

switches produced in CMOS technology. All sensors

change the current consumption depending on the

external magnetic field and require only two wires

between sensor and evaluation circuit. The sensors of

this family differ in the magnetic switching behavior

and switching points.

The sensors include a temperature-compensated Hall

plate with active offset compensation, a comparator,

and a current source. The comparator compares the

actual magnetic flux through the Hall plate (Hall volt-

age) with the fixed reference values (switching points).

Accordingly, the current source is switched on (high

current consumption) or off (low current consumption).

The active offset compensation leads to constant mag-

netic characteristics in the full supply voltage and tem-

perature range. In addition, the magnetic parameters

are robust against mechanical stress effects.

The sensors are designed for industrial and automo-

tive applications and operate with supply voltages from

3.75 V to 24 V in the junction temperature range from

−40 °C up to 140 °C. All sensors are available in the

SMD package SOT89B-1 and in the leaded versions

TO92UA-1 and TO92UA-2.

1.1. Features

– current output for two-wire applications

– low current consumption: 5 mA...6.9 mA

– high current consumption: 12 mA...17 mA

– junction temperature range from −40 °C up to

140 °C.

– operates from 3.75 V to 24 V supply voltage

– operates with static magnetic fields and dynamic

magnetic fields up to 10 kHz

– switching offset compensation at typically 145 kHz

– overvoltage and reverse-voltage protection

– magnetic characteristics are robust against

mechanical stress effects

– constant magnetic switching points over a wide sup-

ply voltage range

– the decrease of magnetic flux density caused by ris-

ing temperature in the sensor system is compen-

sated by a built-in negative temperature coefficient

of the magnetic characteristics

– ideal sensor for applications in extreme automotive

and industrial environments

– EMC corresponding to ISO 7637

1.2. Family Overview

Type

573

574

575

576

579

581

584

Switching

Behavior

unipolar

unipolar

latching

unipolar

latching

unipolar

inverted

unipolar

inverted

Sensitivity

low

medium

medium

medium

medium

medium

medium

see

Page

19

21

23

25

27

29

31

Unipolar Switching Sensors:

The sensor turns to high current consumption with the

magnetic south pole on the branded side of the pack-

age and turns to low consumption if the magnetic field

is removed. The sensor does not respond to the mag-

netic north pole on the branded side.

Current consumption

BHYS

IDDhigh

IDDlow

0

BOFF

BON

B

Fig. 1–1: Unipolar Switching Sensor

4

Dec. 22, 2008; DSH000145_003EN

Micronas

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