HAL573SF-E 查看數據表（PDF） - Micronas

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HAL573SF-E

Two-Wire Hall-Effect Sensor Family

Micronas 

DATA SHEET

HAL57x, HAL58x

Unipolar Inverted Switching Sensors:

The sensor turns to low current consumption with the

magnetic south pole on the branded side of the pack-

age and turns to high consumption if the magnetic field

is removed. The sensor does not respond to the mag-

netic north pole on the branded side.

Current consumption

IDDhigh

BHYS

IDDlow

0

BON

BOFF

B

Fig. 1–2: Unipolar Inverted Switching Sensor

Latching Sensor:

The sensor turns to high current consumption with the

magnetic south pole on the branded side of the pack-

age and turns to low consumption with the magnetic

north pole on the branded side. The current consump-

tion does not change if the magnetic field is removed.

For changing the current consumption, the opposite

magnetic field polarity must be applied.

Current consumption

BHYS

IDDlow

BOFF

0

Fig. 1–3: Latching Sensor

IDDhigh

BON

B

1.3. Marking Code

All Hall sensors have a marking on the package sur-

face (branded side). This marking includes the name

of the sensor and the temperature range.

Type

HAL 573

HAL 574

HAL 575

HAL 576

HAL579

HAL 581

HAL 584

Temperature Range

K

E

573K

573E

574K

574E

575K

575E

576K

576E

579K

579E

581K

581E

584K

584E

1.4. Operating Junction Temperature Range (TJ)

The Hall sensors from Micronas are specified to the

chip temperature (junction temperature TJ).

K: TJ = −40 °C to +140 °C

E: TJ = −40 °C to +100 °C

Note: Due to the high power dissipation at high current

consumption, there is a difference between the

ambient temperature (TA) and junction tempera-

ture. Please refer to Section 5.4. on page 34 for

details.

Micronas

Dec. 22, 2008; DSH000145_003EN

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