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BYD77 查看數據表(PDF) - Philips Electronics

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BYD77 Datasheet PDF : 12 Pages
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Philips Semiconductors
Ultra fast low-loss
controlled avalanche rectifiers
Product specification
BYD77 series
SYMBOL
PARAMETER
Cd
diode capacitance
BYD77A to D
BYD77E to G
-d-d--I--tR--
maximum slope of reverse recovery
current
BYD77A to D
BYD77E to G
CONDITIONS
f = 1 MHz; VR = 0 V;
see Fig.15
when switched from
IF = 1 A to VR 30 V and
dIF/dt = 1 A/µs;
see Fig.17
MIN.
TYP.
50
40
MAX. UNIT
pF
pF
4 A/µs
5 A/µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
30
K/W
150
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 µm, see Fig.16.
For more information please refer to the “General Part of associated Handbook”.
1999 Nov 15
4

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