UGB8FT 查看數據表（PDF） - General Semiconductor
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UGB8FT Datasheet PDF : 2 Pages
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ADVANCED INFORMATION
ADVANCED INFORMATION
ADVANCED INFORMATION
UGB8FT AND UGB8GT
ULTRAFAST SOFT RECOVERY RECTIFIER
Reverse Voltage - 300 to 400 Volts Forward Current - 8.0 Amperes
0.320 (8.13)
0.360 (9.14)
SEATING -T-
PLATE
0.095 (2.41)
0.100 (2.54)
TO-263AB
0.380 (9.65)
0.420 (10.67)
0.245 (6.22)
MIN
K
1K2
0.575 (14.60)
0.625 (15.88)
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.027 (0.686)
0.037 (0.940)
0.090 (2.29)
0.110 (2.79)
0.018 (0.46)
0.025 (0.64)
0.080 (2.03)
0.110 (2.79)
PIN 1
PIN 2
K - HEATSINK
Dimensions are in inches and (millimeters)
FEATURES
♦ Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
♦ Ideally suited for freewheeling diode power factor
correction applications
♦ Soft recovery characteristics
♦ Excellent high temperature switching
♦ Optimized to reduce switching losses
♦ High temperature soldering in accordance with
CECC 802 / Reflow guaranteed
♦ Glass passivated chip junction
MECHANICAL DATA
Case: JEDEC TO-263AB molded plastic body
Terminals: Plated leads, solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Weight: 0.08 ounce, 2.24 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum repetitive peak reverse voltage
SYMBOLS
VRRM
UGB8FT
300
UGB8GT
400
Working peak reverse voltage
VRWM
225
300
Maximum RMS voltage
VRMS
210
280
Maximum DC blocking voltage
VDC
300
400
Maximum average forward rectified current at TC=100°C
I(AV)
8.0
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
IFSM
100.0
Maximum instantaneous forward voltage at IF= 8A (NOTE 1)
TJ=25°C
TJ=150°C
VF
1.30
1.00
Maximum reverse leakage current
at working peak reverse voltage
TC=25°C
TC=100°C
IR
10
350
Reverse recovery time at
IF=1.0A, di/dt=100A/µs, VR=30V, Irr=0.1 IRM
Maximum
trr
50
Maximum reverse recovery time at IF=0.5A, IR=1.0A, Irr=0.25A
trr
35
Maximum reverse recovery current at
IF=10A, di/dt=50A/µs,VR=30V
TC=100°C
IRM
5.5
Maximum stored charge
IF=2A, di/dt=20A/µs, VR=30V, Irr=0.1 IRM
Qrr
55
Typical thermal resistance from junction to case
Operating junction and storage temperature range
RΘJC
TJ, TSTG
2.2
-40 to+150
NOTE: (1) Pulse test: 300µs pulse width, 1% duty cycle
NOTICE: Advanced product information is subject to change without notice
UNITS
Volts
Volts
Volts
Volts
Amps
Amps
Volts
µA
ns
ns
Amps
nC
°C/W
°C
4/98
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