BLF278 查看數據表（PDF） - Philips Electronics
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BLF278 Datasheet PDF : 21 Pages
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Philips Semiconductors
VHF push-pull power MOS transistor
Product Specification
BLF278
FEATURES
• High power gain
• Easy power control
• Good thermal stability
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Broadcast transmitters in the VHF frequency range.
PINNING - SOT262A1
PIN
SYMBOL
1
d1
2
d2
3
g1
4
g2
5
s
DESCRIPTION
drain 1
drain 2
gate 1
gate 2
source
DESCRIPTION
Dual push-pull silicon N-channel enhancement mode
vertical D-MOS transistor encapsulated in a 4-lead,
SOT262A1 balanced flange package with two ceramic
caps. The mounting flange provides the common source
connection for the transistors.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
1
2
d
g
s
g
5
5
d
3
4
Top view
MAM098
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a push-pull common source test circuit.
MODE OF OPERATION
f
(MHz)
VDS
PL
(V)
(W)
CW, class-B
CW, class-C
CW, class-AB
108
50
300
108
50
300
225
50
250
Gp
(dB)
>20
typ. 18
>14
typ. 16
ηD
(%)
>60
typ. 80
>50
typ. 55
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1996 Oct 21
2
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