BLF278 查看數據表（PDF） - Philips Electronics
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BLF278 Datasheet PDF : 21 Pages
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Philips Semiconductors
VHF push-pull power MOS transistor
Product Specification
BLF278
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per transistor section
VDS
drain-source voltage
VGS
gate-source voltage
ID
drain current (DC)
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
up to Tmb = 25 °C total device;
both sections equally loaded
MIN.
−
−
−
−
−65
−
MAX.
UNIT
110
V
±20
V
18
A
500
W
150
°C
200
°C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
Rth mb-h
PARAMETER
CONDITIONS
thermal resistance from junction total device; both sections
to mounting base
equally loaded.
thermal resistance from
mounting base to heatsink
total device; both sections
equally loaded.
VALUE
max. 0.35
max. 0.15
UNIT
K/W
K/W
100
handbook, halfpage
ID
(A)
(1)
10
MRA988
(2)
1
1
10
100
500
VDS (V)
Total device; both sections equally loaded.
(1) Current is this area may be limited by RDSon.
(2) Tmb = 25 °C.
Fig.2 DC SOAR.
handbook5, 0h0alfpage
Ptot
(W)
400
(2)
(1)
300
200
MGE616
100
0
0
40
80
120
160
Th (°C)
Total device; both sections equally loaded.
(1) Continuous operation.
(2) Short-time operation during mismatch.
Fig.3 Power derating curves.
1996 Oct 21
3
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