BLF278 查看數據表（PDF） - Philips Electronics
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BLF278 Datasheet PDF : 21 Pages
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Philips Semiconductors
VHF push-pull power MOS transistor
Product Specification
BLF278
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Per transistor section
V(BR)DSS
IDSS
IGSS
VGSth
∆VGS
drain-source breakdown voltage VGS = 0; ID = 50 mA
drain-source leakage current VGS = 0; VDS = 50 V
gate-source leakage current
VGS = ±20 V; VDS = 0
gate-source threshold voltage VDS = 10 V; ID = 50 mA
gate-source voltage difference VDS = 10 V; ID = 50 mA
of both sections
110 −
−
−
−
−
2
−
−
−
−
V
2.5 mA
1
µA
4.5 V
100 mV
gfs
gfs1/gfs2
forward transconductance
forward transconductance ratio
of both sections
VDS = 10 V; ID = 5 A
VDS = 10 V; ID = 5 A
4.5 6.2 −
S
0.9 −
1.1
RDSon
IDSX
Cis
Cos
Crs
Cd-f
drain-source on-state resistance VGS = 10 V; ID = 5 A
−
drain cut-off current
VGS = 10 V; VDS = 10 V
−
input capacitance
VGS = 0; VDS = 50 V; f = 1 MHz −
output capacitance
VGS = 0; VDS = 50 V; f = 1 MHz −
feedback capacitance
VGS = 0; VDS = 50 V; f = 1 MHz −
drain-flange capacitance
−
0.2 0.3 Ω
25
−
A
480 −
pF
190 −
pF
14
−
pF
5.4 −
pF
0
handbook, halfpage
T.C.
(mV/K)
−1
MGE623
−2
−3
−4
−5
10−2
10−1
1
10
ID (A)
VDS = 10 V.
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current; typical
values per section.
30
handbook, halfpage
ID
(A)
20
MGE622
10
0
0
5
10
15
VGS (V)
VDS = 10 V; Tj = 25 °C.
Fig.5 Drain current as a function of gate-source
voltage; typical values per section.
1996 Oct 21
4
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