BLF278 查看數據表（PDF） - Philips Electronics
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BLF278 Datasheet PDF : 21 Pages
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Philips Semiconductors
VHF push-pull power MOS transistor
Product Specification
BLF278
400
handbook, halfpage
RDSon
(mΩ)
300
MGE621
200
100
0
0
50
100
150
Tj (°C)
VGS = 10 V; ID = 5 A.
Fig.6 Drain-source on-state resistance as a
function of junction temperature; typical
values per section.
1200
handbook, halfpage
C
(pF)
800
MGE615
Cis
400
Cos
0
0
20
40
60
VDS (V)
VGS = 0; f = 1 MHz.
Fig.7 Input and output capacitance as functions
of drain-source voltage; typical values per
section.
handbook4,0h0alfpage
Crs
(pF)
300
MGE620
200
100
0
0
10
20
30
40
50
VDS (V)
VGS = 0; f = 1 MHz.
Fig.8 Feedback capacitance as a function of
drain-source voltage; typical values per
section.
1996 Oct 21
5
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