IRFP450 查看數據表（PDF） - Intersil
零件编号
产品描述 (功能)
生产厂家
IRFP450 Datasheet PDF : 7 Pages
| |||
IRFP450
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current (Note 3)
SYMBOL
TEST CONDITIONS
ISD
Modified MOSFET Symbol
ISDM
Showing the Integral
Reverse P-N Junction
D
Rectifier
G
MIN TYP MAX UNITS
-
-
14
A
-
-
56
A
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
QRR
S
TJ = 25oC, ISD = 14A, VGS = 0V (Figure 13)
TJ = 150oC, ISD = 13A, dISD/dt = 100A/µs
TJ = 150oC, ISD = 13A, dISD/dt = 100A/µs
-
- 1.4
V
- 1300 -
ns
- 7.4 -
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 7.9mH, RG = 25Ω, peak IAS = 14A.
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
15
12
9
6
3
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1
0.1
0.05
0.02
10-2 0.01
SINGLE PULSE
10-3
10-5
10-4
10-3
10-2
0.1
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
PDM
t1
NOTES:
t2
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
1
10
4-355
Share Link: 