MBR1535CT 查看數據表（PDF） - Fairchild Semiconductor

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MBR1535CT

Schottky Rectifiers

Fairchild Semiconductor 

MBR1535CT - MBR1560CT

Features

• Low power loss, high efficiency.

• High surge capacity.

• For use in low voltage, high frequency

inverters, free wheeling, and polarity

protection applications.

• Metal silicon junction, majority carrier

conduction.

• High current capacity, low forward

voltage drop.

• Guarding for over voltage protection.

1

2

3

TO-220AB

PIN 1

PIN 3

+

CASE

PIN 2

Schottky Rectifiers

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol

Parameter

1535

VRRM

Maximum Repetitive Reverse Voltage

35

IF(AV)

Average Rectified Forward Current

.375 " lead length @ TA = 105°C

IFSM

Non-repetitive Peak Forward Surge Current

8.3 ms Single Half-Sine-Wave

Tstg

Storage Temperature Range

TJ

Operating Junction Temperature

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Value

1545 1550

45

50

1560

60

Units

V

15

A

150

A

-65 to +175

°C

-65 to +150

°C

Thermal Characteristics

Symbol

Parameter

PD

Power Dissipation

RθJA

Thermal Resistance, Junction to Ambient

RθJL

Thermal Resistance, Junction to Lead

Value

41.7

60

3.0

Units

W

°C/W

°C/W

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol

Parameter

VF

Forward Voltage IF = 7.5 A, TC = 25°C

IF = 7.5 A, TC = 125°C

IF = 15 A, TC = 25°C

IF = 15 A, TC = 125°C

IR

Reverse Current @ rated VR TA = 25°C

TA = 125°C

IRRM

Peak Repetitive Reverse Surge Current

2.0 us Pulse Width, f = 1.0 KHz

Device

1535 1545

-

0.57

0.84

0.72

1550 1560

0.75

0.65

-

-

0.1

1.0

15

50

1.0

0.5

Units

V

V

V

V

mA

mA

A

2001 Fairchild Semiconductor Corporation

MBR1535CT - MBR1560CT, Rev. C

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