SA5209D 查看數據表（PDF） - NXP Semiconductors.

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SA5209D

Wideband variable gain amplifier

NXP Semiconductors. 

Philips Semiconductors

Wideband variable gain amplifier

Product specification

SA5209

DC ELECTRICAL CHARACTERISTICS

TA = 25oC, VCC1 = VCC2 = +5.0V, VAGC = 1.0V, unless otherwise specified.

SYMBOL

PARAMETER

LIMITS

TEST CONDITIONS

UNIT

MIN

TYP

MAX

RBG

VAGC

IBAGC

Bandgap loading

AGC DC control voltage range

AGC pin DC bias current

Over temperature1

2

10

kΩ

Over temperature1

0-1.3

V

0V<VAGC<1.3V

Over temperature1

-0.7

-6

µA

-10

NOTES:

1. “Over Temperature Range” testing is as follows:

SA is -40 to +85°C

At the time of this data sheet release, the D package over-temperature data sheet limits are guaranteed via guardbanded room temperature

testing only.

AC ELECTRICAL CHARACTERISTICS

TA = 25oC, VCC1 = VCC2 = +5.0V, VAGC = 1.0V, unless otherwise specified.

SYMBOL

PARAMETER

LIMITS

TEST CONDITIONS

UNIT

MIN

TYP

MAX

BW

-3dB bandwidth

600

850

Over temperature1

500

MHz

GF

Gain flatness

DC - 500MHz

Over temperature1

+0.4

dB

+0.6

VIMAX

Maximum input voltage swing (single-ended) for

linear operation2

200

mVP-P

VOMAX

NF

VIN-EQ

Maximum output voltage swing (single-ended)

for linear operation2

Noise figure (unmatched configuration)

Equivalent input noise voltage spectral density

RL = 50Ω

RL = 1kΩ

RS = 50Ω, f = 50MHz

f = 100MHz

400

mVP-P

1.9

VP-P

9.3

dB

2.5

nV/√Hz

S12

Reverse isolation

f = 100MHz

-60

dB

∆G/∆VCC

∆G/∆T

Gain supply sensitivity (single-ended)

Gain temperature sensitivity

RL = 50Ω

0.3

0.013

dB/V

dB/°C

CIN

BWAGC

PO-1dB

PI-1dB

Input capacitance (single-ended)

-3dB bandwidth of gain control function

1dB gain compression point at output

1dB gain compression point at input

f = 100MHz

f = 100MHz, VAGC

=0.1V

2

pF

20

MHz

-3

dBm

-10

dBm

IP3OUT

Third-order intercept point at output

f = 100MHz, VAGC

>0.5V

+13

dBm

IP3IN

Third-order intercept point at input

f = 100MHz, VAGC

<0.5V

+5

dBm

∆GAB

Gain match output A to output B

f = 100MHz, VAGC = 1V

0.1

dB

NOTE:

1. “Over Temperature Range” testing is as follows:

SA is -40 to +85°C

At the time of this data sheet release, the D package over-temperature data sheet limits are guaranteed via guardbanded room temperature

testing only.

2. With RL > 1kΩ, overload occurs at input for single-ended gain < 13dB and at output for single-ended gain > 13dB. With RL = 50Ω, overload

occurs at input for single-ended gain < 6dB and at output for single-ended gain > 6dB.

1997 Nov 07

4

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