SA5209 查看數據表（PDF） - NXP Semiconductors.

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SA5209

Wideband variable gain amplifier

NXP Semiconductors. 

Philips Semiconductors

Wideband variable gain amplifier

Product specification

SA5209

1997 Nov 07

50Ω

SOURCE

2:1 TURNS RATIO

LC TUNED

TRANSFORMER

+5V

5209

50Ω

VAGC

+1V

Figure 6. Narrowband Noise Optimization

50Ω

SOURCE

+5V

MINI CIRCUITS

4:1 BALUN OR

EQUIVALENT

5209

1:4

50Ω

VAGC

+1V

Figure 7. Broadband Gain Optimization

50Ω

SOURCE

4:1 TURNS RATIO

LC TUNED

TRANSFORMER

+5V

5209

50Ω

VAGC

+1V

Figure 8. Narrowband Gain Optimization

50Ω

SOURCE

50Ω

+5V

5209

50Ω

VAGC

+1V

Figure 9. Simple Amplifier Configuration

50Ω

SOURCE

+5V

5209

50Ω

VAGC

+1V

Figure 10. Unterminated Configuration

50Ω

OUTPUT

This circuit will exhibit about a 7dB

noise figure with approximately

22dB gain. Narrowband circuits

have the advantage of greater stabil-

ity, particularly when multiple de-

vices are cascaded.

SR00242

50Ω

OUTPUT

This circuit will exhibit about an 8dB

noise figure with 24dB gain.

SR00243

50Ω

OUTPUT

This circuit will exhibit approximate-

ly an 8dB noise figure and 25dB gain.

SR00244

50Ω

OUTPUT

The noise figure of this configuration

will be approximately 15dB.

SR00245

50Ω

OUTPUT

With the 50Ω source left untermi-

nated, the noise figure is 9dB.

SR00246

7

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