Philips Semiconductors
Schottky barrier triple diode
Product specification
1PS88SB82
FEATURES
• Low forward voltage
• Low diode capacitance
• Three independent diodes in a small SMD plastic
package.
APPLICATIONS
• UHF mixers
• Sampling circuits
• Modulators
• Phase detectors.
DESCRIPTION
Three internal (galvanic) isolated silicon epitaxial Schottky
barrier diodes in a SOT363 (SC-88) small SMD plastic
package. ESD sensitive device, observe handling
precautions.
PINNING
PIN
1
2
3
4
5
6
DESCRIPTION
anode (a1)
anode (a2)
anode (a3)
cathode (k3)
cathode (k2)
cathode (k1)
6 54
handbook, halfpage
123
12
Top view
3
MSA370
654
MGU324
Marking code: E1.
Fig.1 Simplified outline (SOT363; SC-88)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
Per diode
VR
IF
Tstg
Tj
Tamb
continuous reverse voltage
continuous forward voltage
storage temperature
junction temperature
operating ambient temperature
MIN.
MAX.
UNIT
−
15
V
−
30
mA
−65
+150
°C
−
125
°C
−65
+150
°C
2001 Feb 16
2