STZ5.6N(2011) 查看數據表（PDF） - ROHM Semiconductor
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STZ5.6N Datasheet PDF : 5 Pages
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STZ5.6N
Data Sheet
10
1
0.1
0.01
0.001
4
Ta=25℃
Ta=-25℃
Ta=125℃
Ta=75℃
Ta=150℃
4.5 5 5.5 6 6.5 7
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS
1000
100
10
1
0.1
0.01
0.001
0.0001
0
Ta=150℃
Ta=125℃
100
Ta=75℃
Ta=25℃
10
Ta=-25℃
f=1MHz
0.5
1
1.5
2
2.5
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
1
0 0.5 1 1.5 2 2.5 3
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
5.8
1
20
5.7
Ta=25℃
0.9
IZ=5mA
0.8
n=30pcs
0.7
Ta=25℃
19
VR=2.5V
n=30pcs
18
17
Ta=25℃
f=1MHz
VR=0V
n=10pcs
5.6
0.6
16
0.5
15
5.5
AVE:5.659V
5.4
0.4
0.3
AVE:0.080nA
0.2
14
AVE:15.64pF
13
12
11
0.1
5.3
10
0
Vz DISRESION MAP
IR DISRESION MAP
Ct DISRESION MAP
1000
100
10
1
0.1
1
ZENER CURRENT(mA)
Zz-Iz CHARACTERISTICS
1000
Rth(j-a)
100
Rth(j-c)
Mounted on epoxy board
10
IM=10mA
IF=100mA
1ms time
300us
1
10
0.001 0.01 0.1 TIME1:t(s) 10 100 1000
Rth-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
2/2
2011.03 - Rev.C
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