6N06T 查看數據表（PDF） - Unspecified
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6N06T Datasheet PDF : 10 Pages
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Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
PHT6N06T
THERMAL RESISTANCES
SYMBOL
Rth j-sp
Rth j-amb
PARAMETER
From junction to solder point
From junction to ambient
CONDITIONS
Mounted on any PCB
Mounted on PCB of Fig.19
TYP.
12
-
MAX.
15
70
UNIT
K/W
K/W
STATIC CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS
VGS(TO)
IDSS
IGSS
±V(BR)GSS
RDS(ON)
Drain-source breakdown
VGS = 0 V; ID = 0.25 mA
voltage
Tj = -55˚C
Gate threshold voltage
VDS = VGS; ID = 1 mA
Tj = 150˚C
Tj = -55˚C
Zero gate voltage drain current VDS = 55 V; VGS = 0 V;
Tj = 150˚C
Gate source leakage current VGS = ±10 V
Tj = 150˚C
Gate source breakdown voltage IG = ±1 mA
Drain-source on-state
VGS = 10 V; ID = 5 A
resistance
Tj = 150˚C
MIN.
55
50
2.0
1.2
-
-
-
-
-
16
-
-
TYP.
-
-
3.0
-
-
0.05
-
0.04
-
-
120
-
MAX.
-
-
4.0
-
4.4
10
100
1
10
-
150
277
UNIT
V
V
V
V
V
µA
µA
µA
µA
V
mΩ
mΩ
DYNAMIC CHARACTERISTICS
Tmb = 25˚C unless otherwise specified
SYMBOL PARAMETER
gfs
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
td on
tr
td off
tf
Forward transconductance
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Input capacitance
Output capacitance
Feedback capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
CONDITIONS
VDS = 25 V; ID = 5 A; Tj = 25˚C
ID = 5 A; VDD = 44 V; VGS = 10 V
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 30 V; ID = 5 A;
VGS = 10 V; RG = 10 Ω;
Tj = 25˚C
MIN.
0.5
-
-
-
-
-
-
-
-
-
-
TYP.
2.5
6
1.5
4
190
65
32
9
28
15
8
MAX.
-
-
-
-
240
80
45
14
42
23
12
UNIT
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = -55 to 175˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IDR
Continuous reverse drain
Tsp = 25˚C
current
IDRM
Pulsed reverse drain current Tsp = 25˚C
VSD
Diode forward voltage
IF = 2 A; VGS = 0 V
trr
Reverse recovery time
IF = 2 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge
VGS = -10 V; VR = 30 V
MIN. TYP. MAX. UNIT
-
-
5.5 A
-
-
30
A
- 0.85 1.1 V
-
43
-
ns
- 0.16 -
µC
September 1997
2
Rev 1.000
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