6N06T 查看數據表（PDF） - Unspecified
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6N06T Datasheet PDF : 10 Pages
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Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
PHT6N06T
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER
WDSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
ID = 1.9 A; VDD ≤ 25 V;
VGS = 10 V; RGS = 50 Ω; Tsp = 25 ˚C
MIN.
-
TYP.
-
MAX. UNIT
15 mJ
September 1997
3
Rev 1.000
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