6N06T 查看數據表（PDF） - Unspecified
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6N06T Datasheet PDF : 10 Pages
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Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
PHT6N06T
120 PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/PD 25 ˚C = f(Tsp)
ID%
120
110
100
90
Normalised Current Derating
80
70
60
50
40
30
20
10
0
0
20 40 60 80 100 120 140
Tmb / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/ID 25 ˚C = f(Tsp); conditions: VGS ≥ 10 V
100
ID/A
BUKX8150-55
RDS(ON) = VDS/ID
10
DC
1
tp =
1 us
10 us
100 us
1 ms
10 ms
100 ms
0.1 1
10
55
VDS/V
Fig.3. Safe operating area. Tsp = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
Zth / (K/W)
1E+02
BUKX8150-55
3E+01
1E+01
0.5
3E+00 0.2
0.1
1E+00 0.05
3E-01 0.02
1E-01
0
3E-02
PD
tp
D
=
tp
T
T
t
1E-02
1E-07
1E-05
1E-03
t/s
1E-01
1E+01
Fig.4. Transient thermal impedance.
Zth j-sp = f(t); parameter D = tp/T
10
16
ID/A
10
8
8
6
VGS/V =
6.5
6.0
5.5
4
5.0
2
4.5
4.0
0
0
2
4
6
8
10
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
400 RDS(ON)mOhm
5
300
5.5
6
200
100
6.5
7
8
10
0
0 1 2 3 4 5 6 7 8 9 10 11
ID/A
Fig.6. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
September 1997
4
Rev 1.000
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