6N06T 查看數據表（PDF） - Unspecified
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6N06T Datasheet PDF : 10 Pages
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Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
PHT6N06T
12
VGS/V
10
8
VDS = 14V
VDS = 44V
6
4
2
0
0
1
2
3
4
5
6
7
QG/nC
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 5 A; parameter VDS
10
IF/A
8
6
Tj/C = 150
25
4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSDS/V
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
WDSS%
120
110
100
90
80
70
60
50
40
30
20
10
0
20
40
60
80 100 120 140
Tmb / C
Fig.15. Normalised avalanche energy rating.
WDSS% = f(Tsp); conditions: ID = 1.9 A
VGS
0
RGS
L
VDS
T.U.T.
+ VDD
-
-ID/100
R 01
shunt
Fig.16. Avalanche energy test circuit.
WDSS = 0.5 ⋅ LID2 ⋅ BVDSS/(BVDSS − VDD)
+ VDD
RD
VDS
-
VGS
0
RG
T.U.T.
Fig.17. Switching test circuit.
September 1997
6
Rev 1.000
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