25N120 查看數據表（PDF） - IXYS CORPORATION
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25N120 Datasheet PDF : 4 Pages
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IXEH 25N120
IXEH 25N120D1
Diode [D1 version only]
Symbol
IF25
IF90
Conditions
TC = 25°C
TC = 90°C
Maximum Ratings
31
A
19
A
Equivalent Circuits for Simulation
Conduction
Symbol
VF
IRM
trr
RthJC
Conditions
IF = 25 A; TVJ = 25°C
TVJ = 125°C
IF = 15 A; diF/dt = -400 A/µs; TVJ = 125°C
VR = 600 V; VGE = 0 V
Characteristic Values
min. typ. max.
2.7 3.2 V
2.1
V
16
A
130
ns
1.6 K/W
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 1.09 V; R0 = 85 mΩ
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 1.3 V; R0 = 32 mΩ
Thermal Response
Component
Symbol
TVJ
Tstg
Md
Conditions
mounting torque
Symbol
Conditions
RthCH
Weight
with heatsink compound
Maximum Ratings
-55...+150
°C
-55...+150
°C
0.8...1.2
Nm
Characteristic Values
min. typ. max.
0.25
K/W
6
g
IGBT (typ.)
Cth1 = 0.004 J/K; Rth1 = 0.335 K/W
Cth2 = 0.133 J/K; Rth2 = 0.295 K/W
Free Wheeling Diode (typ.)
Cth1 = 0.004 J/K; Rth1 = 1.076 K/W
Cth2 = 0.078 J/K; Rth2 = 0.524 K/W
TO-247 AD Outline
Dim. Millimeter
Min. Max.
A
4.7 5.3
A1
2.2 2.54
A2
2.2 2.6
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
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