8N60C 查看數據表（PDF） - Unspecified
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8N60C Datasheet PDF : 9 Pages
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Package Marking and Ordering Information
Part Number
FQB8N60CTM
FQI8N60CTU
Top Mark
FQB8N60C
FQI8N60C
Package
D2-PAK
I2-PAK
Packing Method
Tape and Reel
Tube
Reel Size
330 mm
N/A
Tape Width
24 mm
N/A
Quantity
800 units
50 units
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted.
Test Conditions
Min. Typ. Max. Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
600 --
∆BVDSS Breakdown Voltage Temperature
/ ∆TJ Coefficient
ID = 250 µA, Referenced to 25°C -- 0.7
IDSS
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
--
--
--
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
--
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 3.75 A
VDS = 40 V, ID = 3.75 A
2.0 --
4.0
V
-- 1.0 1.2
Ω
-- 8.7
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 965 1255 pF
-- 105 135
pF
--
12
16
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 300 V, ID = 7.5A,
RG = 25 Ω
-- 16.5 45
ns
-- 60.5 130
ns
--
81 170
ns
(Note 4) --
64.5
140
ns
VDS = 480 V, ID = 7.5A,
--
28
36
nC
VGS = 10 V
-- 4.5
--
nC
(Note 4) --
12
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 7.5 A
trr
Reverse Recovery Time
VGS = 0 V, IS = 7.5 A,
Qrr
Reverse Recovery Charge
dIF / dt = 100 A/µs
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2.L = 7.3 mH, IAS = 7.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3.ISD ≤ 7.5 A, di/dt ≤ 200 A/µs , VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
--
--
7.5
A
--
--
30
A
--
--
1.4
V
-- 365
--
ns
-- 3.4
--
µC
©2003 Fairchild Semiconductor Corporation
2
FQB8N60C / FQI8N60C Rev. C1
www.fairchildsemi.com
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