MRF6S9060 查看數據表（PDF） - Freescale Semiconductor

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产品描述 (功能)

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MRF6S9060

RF Power Field Effect Transistors

Freescale Semiconductor 

Zo = 5 Ω

Zsource

f = 910 MHz

f = 850 MHz

f = 910 MHz

Zload

f = 850 MHz

VDD = 28 Vdc, IDQ = 450 mA, Pout = 14 W Avg.

f

MHz

Zsource

Ω

Zload

Ω

850

0.44 - j0.20

2.28 + j0.23

865

0.44 - j0.07

2.18 + j0.33

880

0.45 + j0.50

2.20 + j0.47

895

0.48 + j0.18

2.15 + j0.61

910

0.52 + j0.29

2.00 + j0.68

Zsource = Test circuit impedance as measured from

gate to ground.

Zload = Test circuit impedance as measured

from drain to ground.

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

Z source

Z load

Figure 16. Series Equivalent Source and Load Impedance

MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1

10

RF Device Data

Freescale Semiconductor

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