MUR3020PA 查看數據表（PDF） - Unspecified

零件编号

产品描述 (功能)

生产厂家

MUR3020PA

30.0 Ampere Heatsink Dual Common Anode Ultra Fast Recovery Half Bridge Rectifiers

Unspecified 

MUR3020PA thru MUR3060PA

Pb Free Plating Product

MUR3020PA/MUR3040PA/MUR3060PA

Pb

30.0 Ampere Heatsink Dual Common Anode Ultra Fast Recovery Half Bridge Rectifiers

Features

Fast switching for high efficiency

Low forward voltage drop

High current capability

Low reverse leakage current

High surge current capability

Application

Automotive Inverters and Solar Inverters

Plating Power Supply,Motor Control,SMPS and UPS

Car Audio Amplifiers and Sound Device Systems

TO-3PN

Bottom Side Metal Heat Sink

Mechanical Data

Case: Heatsink TO-3PN open metal package

Epoxy: UL 94V-0 rate flame retardant

Terminals: Solderable per MIL-STD-202

method 208

Polarity: As marked on diode body

Mounting position: Any

Weight: 0.65 gram approximately

Case

Case

Case

Case

Positive

Negative

Doubler

Series

Common Cathode Common Anode Tandem Polarity Tandem Polarity

Suffix "PT"

Suffix "PA"

Suffix "PD"

Suffix "PS"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25oC ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

SYMBOL MUR3020PA MUR3040PA MUR3060PA UNIT

Maximum Recurrent Peak Reverse Voltage VRRM

200

Maximum RMS Voltage

VRMS

140

Maximum DC Blocking Voltage

VDC

200

Maximum Average Forward Rectified

Current TC=125oC (Total Device 2x15A=30A) IF(AV)

Peak Forward Surge Current, 8.3ms single

Half sine-wave superimposed on rated load IFSM

(JEDEC method)

Maximum Instantaneous Forward Voltage

VF

0.98

@ 15.0 A (Per Diode/Per Leg)

Maximum DC Reverse Current @TJ=25oC

At Rated DC Blocking Voltage @TJ=125oC

IR

Maximum Reverse Recovery Time (Note 1) Trr

Typical junction Capacitance (Note 2)

CJ

Operating Junction and Storage

Temperature Range

TJ, TSTG

NOTES : (1) Reverse recovery test conditions IF = 0.5A IR = 1.0A Irr = 0.25A.

(2) Thermal Resistance junction to terminal.

(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

400

280

400

30.0

300

1.3

10

500

35-50

150

-55 to +150

600

V

420

V

600

V

A

A

1.7

V

uA

uA

nS

pF

oC

Rev.08T

© 1995 Thinki Semiconductor Co., Ltd.

Page 1/3

http://www.thinkisemi.com.tw/

Share Link: