DFP2N60 查看數據表（PDF） - Unspecified
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DFP2N60 Datasheet PDF : 11 Pages
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DFP2N60
DFF2N60
2
12 3
1
12 3
3
1. Gate 2. Drain 3. Source
DFP2N60/DFF2N60
600V 2.4A
High ruggedness N-Channel
MOSFET
■ BVDSS : 600[V]
■ ID : 2.4[A]
■ RDS(ON) : 5.5[Ω]
■ Typical package type : TO220/TO220F
Features
■ RDS(on) (Max 5.5 Ω)
■ Gate Charge (Typical 15nC)
■ Improved dv/dt Capability
■ High ruggedness
■ 100% Avalanche Tested
■ Rohs Compliable
■ Halogen Free available
General Description
■ This N-channel enhancement mode field-effect power transis-
tor using DI semiconductor’s advanced planar stripe, DMOS
technology intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics.
■ The TO-220 & TO220 full packages are well suited for charger
SMPS and small power inverter application.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain to Source Voltage
Continuous Drain Current(@TC = 25 °C)
Continuous Drain Current(@TC = 100 °C)
IDM
VGS
EAS
EAR
dv/dt
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
PD
Derating Factor above 25 °C
TSTG, TJ
TL
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
DFP2N60 DFF2N60
600
2.4
2.4*
1.5
1.5*
9.6
9.6*
±30
140
2.8
4.5
64
28
0.5
0.21
- 55 ~ +150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Maximum value
DFP2N60 DFF2N60
1.95
4.5
62.5
62.5
Sept, 2009. Rev. 4.
Copyright@ BoSung D&I Semiconductor Co., Ltd., Korea . All rights reserved.
Units
°C/W
°C/W
1/11
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