DFF2N60 查看數據表（PDF） - Unspecified
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DFF2N60 Datasheet PDF : 11 Pages
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DFP2N60/DFF2N60
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Off Characteristics
Test Conditions
Min
BVDSS Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
600
Δ BVDSS/ Breakdown Voltage Temperature
Δ TJ coefficient
ID = 250uA, referenced to 25 °C
-
VDS =600V, VGS = 0V
-
IDSS Drain-Source Leakage Current
VDS = 480V, TC = 125 °C
-
Gate-Source Leakage, Forward
VGS = 30V, VDS = 0V
-
IGSS
Gate-source Leakage, Reverse
VGS = -30V, VDS = 0V
-
On Characteristics
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 250uA
2.0
RDS(ON)
Static Drain-Source On-state Resis-
tance
VGS =10 V, ID =1.2A
-
Dynamic Characteristics
Ciss
Input Capacitance
-
Coss Output Capacitance
VGS =0 V, VDS =25V, f = 1MHz
-
Crss Reverse Transfer Capacitance
-
Dynamic Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
-
VDD =300V, ID =2.4A, RG =25 Ω
-
※ see fig. 13.
-
(Note 4, 5)
-
-
VDS =480V, VGS =10V, ID =2.4A
-
Qgd
Gate-Drain Charge(Miller Charge)
※ see fig. 12.
(Note 4, 5)
-
Typ Max Units
-
-
V
0.38
-
V/°C
-
1
uA
-
10
uA
-
100
nA
-
-100
nA
-
4.0
V
4.5
5.5
Ω
570 720
150 215
pF
310 450
15
40
75
160
ns
30
60
35
80
15
20
1.6
-
nC
6
-
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
IS
Continuous Source Current
Integral Reverse p-n Junction
ISM
Pulsed Source Current
Diode in the MOSFET
VSD
Diode Forward Voltage
IS =2.4A, VGS =0V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IS=2.4A, VGS=0V, dIF/dt=100A/us
※ NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L =44.7mH, IAS =2.4A, VDD = 50V, RG = 50 Ω , Starting TJ = 25°C
3. ISD ≤ 2.4A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.
Min.
-
-
-
-
-
Typ.
-
-
-
600
1.1
Max.
2.4*
9.6*
1.5
-
-
Unit.
A
V
ns
uC
2/11
Copyright@ BoSung D&I Semiconductor Co., Ltd., Korea . All rights reserved.
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