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DFP2N60 查看數據表(PDF) - Unspecified

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DFP2N60 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
DFP2N60/DFF2N60
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
1.2
1.1
1.0
0.9
0.8
-100
Notes :
1. VGS = 0 V
2. ID = 250 μ A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Fig 9. Maximum Safe Operating Area
101
Operation in This Area
is Limited by R
DS(on)
100
100us
1ms
10ms
100ms
DC
10-1
10-2
10-1
*. Notes :
1. T = 25OC
C
2. T = 150OC
J
3. Single Pulse
100
101
102
103
V , Drain-Source Voltage [V]
DS
Fig 11. Maximum Drain Current
vs. Case Temperature. (TO220)
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
T Case Temperature [oC]
C'
Fig 8. On-Resistance Variation
vs. Junction Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. VGS = 10 V
2. ID = 1.2 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Fig 10. Maximum Safe Operating Area
101
Operation in This Area
is Limited by R
DS(on)
100
100 μs
1 ms
10 ms
100 ms
DC
10-1
*. Notes :
1. T = 25OC
C
2. T = 150OC
J
3. Single Pulse
10-2
100
101
102
103
V , Drain-Source Voltage [V]
DS
Fig 12. Maximum Drain Current
vs. Case Temperature. (TO220F)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
50
75
100
125
150
T Case Temperature [oC]
C'
4/11
Copyright@ BoSung D&I Semiconductor Co., Ltd., Korea . All rights reserved.

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