HAT2167H(2003) 查看數據表（PDF） - Renesas Electronics

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HAT2167H
(Rev.:2003)

Silicon N Channel Power MOS FET Power Switching

Renesas Electronics 

HAT2167H

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Avalanche current

Avalanche energy

Channel dissipation

VDSS

VGSS

ID

ID(pulse)Note1

IDR

IAP Note 2

EAR Note 2

Pch Note3

Channel to Case Thermal Resistance θch-C

Channel temperature

Tch

Storage temperature

Tstg

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tch = 25°C, Rg ≥ 50 Ω

3. Tc = 25°C

Ratings

30

±20

40

160

40

20

40

20

6.25

150

–55 to +150

Unit

V

V

A

A

A

A

mJ

W

°C/W

°C

°C

Rev.4.00, Jun.04.2003, page 2 of 10

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