HAT2167H-EL-E 查看數據表（PDF） - Renesas Electronics
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HAT2167H-EL-E Datasheet PDF : 8 Pages
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HAT2167H
Static Drain to Source on State Resistance
vs. Temperature
10
Pulse Test
I D = 50 A
8
VGS = 4.5 V
6
10 A, 20 A
4
10 V
2
10 A, 20 A, 50 A
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
100
50
20
10
0.1 0.3 1
di/dt = 100 A/µs
VGS = 0, Ta = 25°C
3 10 30 100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
50
20
ID = 30 A
40
VDD = 25 V
10 V
5V
30
VDS
VGS
16
12
20
8
10
VDD = 25 V
4
10 V
5V
0
0
0
20 40 60 80 100
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = -25°C
75°C
10
25°C
3
1
0.3
VDS = 10 V
0.1
Pulse Test
0.1 0.3 1 3 10 30 100
Drain Current ID (A)
10000
3000
1000
300
100
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
Crss
30 VGS = 0
f = 1 MHz
10
0
5 10 15 20 25 30
Drain to Source Voltage VDS (V)
1000
Switching Characteristics
300
100
td(off)
tr
30
10
3
1
0.1 0.3
td(on)
tf
VGS = 10 V, VDS = 10 V
Rg = 4.7 Ω, duty ≤ 1 %
1 3 10 30 100
Drain Current ID (A)
Rev.5.00 Sep 20, 2005 page 4 of 7
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